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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 3.1W|3.4W
Operating temperature: -55 to 150C
Drain to Source voltage: 60V
Current - Drain (Id) (25°C): 5.3|3.9A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 20nC@10V
On Voltage - (Vgs when Id is applied): 3V@250uA
On Resistance - (Rds when Id,Vgs is applied): 58mOhm@4.3A|10V
Input Capacitance - (Ciss when Vds is applied): 665pF@15V
