Vishay SI5511DC-T1-E3 Trans MOSFET N/P-CH 30V 4A/2.3A 8-Pin Chip FET T/R

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 3.1W|2.6W

Operating temperature: -55 to 150C

Drain to Source voltage: 30V

Continuous drain current: 4A/3.6A

Current - Drain (Id) (25°C): 4|3.6A

Field-effect transistor type: N and P-Channel

Gate Charge - (when applying Vgs): 7.1nC@5V

On Voltage - (Vgs when Id is applied): 2V@250uA

On Resistance - (Rds when Id,Vgs is applied): 55mOhm@4.8A|4.5V

Input Capacitance - (Ciss when Vds is applied): 435pF@15V