Vishay SI7405BDN-T1-GE3 MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 115nC

Power consumption: 3.6|33W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 16A

Input Capacitance (Ciss): 3500pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 13mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V