Vishay SI8851EDB-T2-E1 单个MOSFET

No. of Pins: 30

Channel Type: P Channel

Power Dissipation: 3.1

Transistor Mounting: Surface Mount

Transistor Case Style: Power MICRO FO

Drain Source Voltage Vds: 20

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 16.7

Drain Source On State Resistance: 8

Gate Source Threshold Voltage Max: 1

Datasheet