Vishay SIA411DJ-T1-GE3 MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 38nC

Power consumption: 3.5|19W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 12A

Input Capacitance (Ciss): 1200pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 30mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V