Vishay SIHA30N60AEL-GE3 MOSFET

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 120nC

Power consumption: 39W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 28A

Input Capacitance (Ciss): 2565pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 120mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V