Vishay SIR578DP-T1-RE3 MOSFETs SOT669 150V 70.2A N沟MOSFET

Fall Time: 23 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 24.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 70.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 62 S

Rds On - Drain-Source Resistance: 8.8 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4 V