Vishay SIS436DN-T1-GE3 MOSFET

Vgs(th): 2.3 V

Vgs (Max): 20V

Gate Charge (Qg): 22nC

Power consumption: 3.5|27.7W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 16A

Input Capacitance (Ciss): 855pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 10.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V