Vishay SISA18ADN-T1-GE3 N沟道30伏（漏-源）MOSFET
制造商Vishay(查看更多该品牌的产品)
ModelSISA18ADN-T1-GE3
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No. of Pins: 8
Channel Type: N Channel
Power Dissipation: 19.8
Transistor Mounting: Surface Mount
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 30
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 38.3
Drain Source On State Resistance: 7.5
Gate Source Threshold Voltage Max: 2.4
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