Vishay SQJQ936E-T1_GE3 金属氧化物半导体场效应晶体管

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 75 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 75 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V