WeEn Semiconductors BUJ100LR,126 双极晶体管 GP BJT NPN 400V 1A 3针

Width: 4.2 mm

Height: 5.2 mm

Length: 4.8 mm

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 31

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 9

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 240 mV