WeEn Semiconductors BUJ302A,127 双极型晶体管 NPN 400 V 4 A

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 100

Emitter- Base Voltage VEBO: 19 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 600 mV