WeEn Semiconductors PHE13003A,126 双极型晶体管 单个NPN 1A 2.1W

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 30

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 700 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 400 mV