WeEn Semiconductors PHE13007,127 双极晶体管 BJTs RAIL PWR-MOS

Width: 4.7 mm

Height: 9.4 mm

Length: 10.3 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 40

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 510 mV