WeEn Semiconductors WG30N65MFW1Q IGBTs WG30N65MFW1/TO247/标准标记 * 水平，导轨包装

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 312 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 60 A