WeEn Semiconductors WNSC2M20065TB6J 碳化硅MOSFET，单个，N沟道，151安，650伏，21毫欧，TSPAK，7针

No. of Pins: 7

Channel Type: N Channel

Power Dissipation: 577 W

RDS(ON) Test Voltage: 18 V

Transistor Case Style: TSPAK

Drain Source Voltage Vds: 650 V

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 151 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 21 mOhm

Gate Source Threshold Voltage Max: 3.5 V

Datasheet