Wolfspeed C2M0160120D SiC MOSFETS 硅碳化物MOSFET 1200V 导通电阻160毫欧

Fall Time: 7 ns

Rise Time: 12 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 32.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 17.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.1 S

Rds On - Drain-Source Resistance: 196 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V