Wolfspeed C3M0075120J-TR SiC MOSFETS 碳化硅MOSFET 1200V 75毫欧

Fall Time: 10 ns

Rise Time: 9 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 51 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 113.6 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.3 S

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V