Wolfspeed CCB016M12GM3T MOSFET模块 SiC，模块，16毫欧，1200V，48毫米，GM3六件装，工业用，预涂导热界面材料

Technology: SiC

Mounting Style: Screw Mount

Number of Channels: 6 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 10 mW

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.9 V