YAGEO XSemi XP6NA6R5H MOSFET N沟道 60V 66A TO-252

Width: 6.50 mm

Height: 2.30 mm

Length: 9.43 mm

Fall Time: 68 ns

Rise Time: 56 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 35 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 66 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 54 S

Rds On - Drain-Source Resistance: 6.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V