| 制造商: | InterFET |
| Model: | J110 |
Technology: Si
Unit Weight: 454 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 10 mA
Id - Continuous Drain Current: 1 uA
Rds On - Drain-Source Resistance: 18 Ohms
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 15 V
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