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Technology: Si
Unit Weight: 336 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 5 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 600 mV
