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GeneSiC GB10SLT12-252 Schottky Silicon Carbide Diodes 1200V - 10A SiC Schottky Rect. | EMIN.VN

Diodes & Rectifiers
GeneSiC GB10SLT12-252 Schottky Silicon Carbide Diodes 1200V - 10A SiC Schottky Rect.

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GeneSiC GB10SLT12-252 Schottky Silicon Carbide Diodes 1200V - 10A SiC Schottky Rect.

ManufacturerGeneSiC(View more products from this manufacturer)

ModelGB10SLT12-252

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Technology: SiC

Unit Weight: 300 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 10 A

Vf - Forward Voltage: 1.5 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV

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