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Infineon FF600R12ME4EB11BPSA1 IGBT Silicon Modules MEDIUM POWER ECONO | EMIN.VN

Discrete & Power Modules
Infineon FF600R12ME4EB11BPSA1 IGBT Silicon Modules MEDIUM POWER ECONO

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Infineon FF600R12ME4EB11BPSA1 IGBT Silicon Modules MEDIUM POWER ECONO

ManufacturerInfineon(View more products from this manufacturer)

ModelFF600R12ME4EB11BPSA1

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Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 600 A

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