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Fall Time: 9 ns
Rise Time: 12 ns
Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 11 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 236 W
Vgs - Gate-Source Voltage: - 10 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 70 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
