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Technology: Si
Unit Weight: 540 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 480 mW
Gate-Source Cutoff Voltage: - 1.5 V
Drain-Source Current at Vgs=0: 25 mA
Id - Continuous Drain Current: 1 uA
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 0.01 mS
Vgs - Gate-Source Breakdown Voltage: - 20 V
Vds - Drain-Source Breakdown Voltage: 10 V
