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Width: 45 mm
Height: 17 mm
Length: 107.5 mm
Technology: Si
Pd - Power Dissipation: 60 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current at 25 C: 17 A
