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Gain: 19 dB
Technology: Si
Output Power: 630 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 920 MHz to 960 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 3.65 V
Id - Continuous Drain Current: 600 mA
Rds On - Drain-Source Resistance: 70 mOhms
Vds - Drain-Source Breakdown Voltage: 105 V
