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Technology: Si
Unit Weight: 47.095 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.75 W
DC Current Gain hFE Max: 100
Emitter- Base Voltage VEBO: 12 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 35
Collector- Emitter Voltage VCEO Max: 55 V
Collector-Emitter Saturation Voltage: 750 mV
