Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 5.835 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 150 at 50 mA, 10 VDC
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 175 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50 at 50 mA, 10 VDC
Collector- Emitter Voltage VCEO Max: 175 V
Collector-Emitter Saturation Voltage: 300 mV
