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Technology: SiC
Unit Weight: 10 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 781 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 30 V, 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 135 A
