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Technology: Si
Unit Weight: 130.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 6.7 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 90 at 30 mA, 5 V
Collector- Emitter Voltage VCEO Max: 12 V
