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Fall Time: 46 ns
Rise Time: 12 ns
Technology: Si
Unit Weight: 297 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 40.7 nC
Transistor Polarity: P-Channel
Pd - Power Dissipation: 60 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 28 ns
Typical Turn-Off Delay Time: 151 ns
Id - Continuous Drain Current: 14 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 3 V
