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Fall Time: 10 ns, 45 ns
Rise Time: 47 ns, 27 ns
Technology: Si
Unit Weight: 14.194 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 4.6 nC, 5.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 4 ns
Typical Turn-Off Delay Time: 18 ns, 78 ns
Id - Continuous Drain Current: 4.1 A, 3.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 56 mOhms, 100 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
