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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 120 at 5 mA, 10 V
Gain Bandwidth Product fT: 3.2 GHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 56 at 5 mA, 10 V
Collector- Emitter Voltage VCEO Max: 11 V
Collector-Emitter Saturation Voltage: 500 mV
