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Fall Time: 5 ns, 10 ns
Rise Time: 8 ns, 15 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3.9 nC, 5.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6 ns, 10 ns
Typical Turn-Off Delay Time: 22 ns, 35 ns
Id - Continuous Drain Current: 5 A, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S, 1.8 S
Rds On - Drain-Source Resistance: 51 mOhms, 90 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V
