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Gain: 14 dB
Technology: Si
Unit Weight: 4 g
Output Power: 180 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 1.6 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 200 C
Rds On - Drain-Source Resistance: 1 Ohms
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
