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Gain: 16 dB
Technology: Si
Unit Weight: 10.550 g
Output Power: 300 W
Configuration: Dual
Mounting Style: SMD/SMT
Operating Frequency: 250 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 125 V
