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Gain: 14.8 dB
Technology: Si
Output Power: 150 W
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 250 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 389 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 4 S
Vds - Drain-Source Breakdown Voltage: 200 V
