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Gain: 24 dB
Technology: Si
Unit Weight: 8 g
Output Power: 300 W
Configuration: Triple
Mounting Style: SMD/SMT
Transistor Type: DMOS FET
Operating Frequency: 100 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 648 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
