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Teledyne e2v GS66516B GAN 4 GaNPX / Bottom Cooled EHEMT/ 650V-25mOhm | EMIN.VN

GaN FETs
Teledyne e2v GS66516B GAN 4 GaNPX / Bottom Cooled EHEMT/ 650V-25mOhm

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Teledyne e2v GS66516B GAN 4 GaNPX / Bottom Cooled EHEMT/ 650V-25mOhm

ManufacturerTeledyne e2v

ModelGS66516B

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Transistor Mounting: Surface Mount

Typical Gate Charge: 12.1

Transistor Case Style: DIE

Drain Source Voltage Vds: 650

Continuous Drain Current Id: 60

Drain Source On State Resistance: 32

Datasheet

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