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Teledyne e2v TDG650E60BEPX GaNPX / 650V 60A / Ruggedized Plastic Enhancement Mode GaNFET | EMIN.VN

GaN FETs
Teledyne e2v TDG650E60BEPX GaNPX / 650V 60A / Ruggedized Plastic Enhancement Mode GaNFET

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Teledyne e2v TDG650E60BEPX GaNPX / 650V 60A / Ruggedized Plastic Enhancement Mode GaNFET

ManufacturerTeledyne e2v(View more products from this manufacturer)

ModelTDG650E60BEPX

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Transistor Mounting: Surface Mount

Typical Gate Charge: 14.2

Transistor Case Style: DIE

Drain Source Voltage Vds: 650

Continuous Drain Current Id: 60

Drain Source On State Resistance: 60

Datasheet

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