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Width: 3.3 mm
Height: 1 mm
Length: 3.3 mm
Fall Time: 3.1 ns
Rise Time: 9.1 ns
Technology: Si
Unit Weight: 40.600 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: TPS65090EVM
Transistor Type: 1 N-Channel
Qg - Gate Charge: 5.1 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.7 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 5.1 ns
Typical Turn-Off Delay Time: 10.4 ns
Id - Continuous Drain Current: 56 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 48 S
Rds On - Drain-Source Resistance: 7.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
