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Width: 5 mm
Height: 1.5 mm
Length: 6 mm
Fall Time: 4.3 ns, 6.6 ns
Rise Time: 20.4 ns, 14.8 ns
Technology: Si
Unit Weight: 170 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 9.7 nC, 23 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 8.4 ns, 9.5 ns
Typical Turn-Off Delay Time: 14.5 ns, 29.3 ns
Id - Continuous Drain Current: 50 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 113 S, 169 S
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV
