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Key Specifications(a)
Detector Type: UV-Enhanced Silicon APD
Wavelength Range:200 - 1000 nm
Output Bandwidth (3 dB)(b): DC - 10 MHz
Active Area Diameter: 0.5 mm
Typical Max Responsivity: 25 A/W @ M = 50(c)
Transimpedance Gain: 250 kV/A (50 Ω) 500 kV/A (High-Z)
Max Conversion Gain(e): 12.4 × 10^6 V / W
M Factor Adjustment Range: 5 - 50 (Continuous)
M Factor Temperature Stability(f): ±2% (Typical); ±3% (Max)
Saturation Power (CW): 0.32 µW @ M = 50(c) 3.20 µW @ M = 5
Minimum NEP(g): 0.09 fW/√Hz
Dimensions (H x Wx D): 2.97" x 2.20" x 1.09"
(a) For a complete list of specifications and responsivity graphs, please see the manual. Data are valid at 23 ± 5 °C and 45% ± 15% relative humidity (non-condensing).
(b) At Maximum Gain Setting
(c) At 600 nm
(d) At 800 nm
(e) At the Peak Responsivity Wavelength
(f) Within the 23 ± 5 °C temperature range.
(g) For more information on how NEP is calculated, please see Thorlabs' Noise Equivalent Power White Paper.
