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Technology: Si
Configuration: Half Bridge
Mounting Style: Screw Mount
Pd - Power Dissipation: 864 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 6.3 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.29 V
Continuous Collector Current at 25 C: 600 A
