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Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 2.1 W
DC Current Gain hFE Max: 30
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 700 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 5
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 400 mV
