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Width: 42.5 mm
Height: 12.25 mm
Length: 51 mm
Technology: SiC
Configuration: H-Bridge
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vf - Forward Voltage: 4.9 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 10 mW
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Operating Temperature Range: - 40 C to + 150 C
Id - Continuous Drain Current: 200 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 6 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V