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Width: 10.2 mm
Height: 4.65 mm
Length: 29.22 mm
Fall Time: 89 ns
Rise Time: 44 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Qg - Gate Charge: 25 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 33.7 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 9 ns
Typical Turn-Off Delay Time: 46 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 34 S
Rds On - Drain-Source Resistance: 16 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
