Infineon IKW30N60H3FKSA1 IGBT Transistors 600V 30A 187W
Manufacturer: Infineon Model: IKW30N60H3FKSA1 - Contact
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Width: 5.31 mm
Height: 20.7 mm
Length: 15.87 mm
Technology: Si
Unit Weight: 5.420 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 187 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Continuous Collector Current at 25 C: 60 A
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